Device and method for circuit protection during radiation sterilization

ABSTRACT

A circuit protection device for protection of sensitive components during high energy radiation sterilization that includes a support substrate and a protective housing. The substrate supports the sensitive components. The protective housing is hermetically coupled to the support substrate to seal the sensitive components within the protective housing. Preferably, the protective housing stops high energy used in the high energy sterilization from damaging the sensitive components from a predetermined exposure level of high energy sterilization. The circuit protection device may further include a protective conductor that is coupled to the support substrate on a side which is opposite the protective housing to prevent high energy from entering the opposite side of the support substrate. The circuit protection device can also include an energy absorbing material contained within an area sealed by the protective housing to absorb high energy by products produced by the protective housing stopping the high energy used in the high energy sterilization. Preferably, the support substrate is a circuit board, and the sensitive elements are semiconductors. Also, the high energy sterilization is E-beam sterilization and the high energy are electrons, and the high energy byproducts are x-rays.

FIELD OF THE INVENTION

This invention relates to circuit protection devices and methods, and inparticular embodiments, to circuit protection devices and methods foruse during radiation sterilization of devices containing electroniccircuits.

BACKGROUND OF THE INVENTION

Over the years, sterilization of medical devices has become moreimportant and difficult. At one time it was possible to sterilize mostmedical devices at the site of use, since the devices were relativelysimple, such as reusable syringes, scalpels, scissors or the like. Inaddition, the medical devices were often used in a doctor's office,hospital, or the like, that included sophisticated sterilizationequipment. Thus, the medical devices could be shipped for use withoutsterilization.

However, medical devices have changed considerably over the years. Forinstance, the devices are becoming more complicated and use manydifferent materials, such that autoclaving, chemical sterilization, orthe like, is no longer possible, since the processes would likelydestroy the materials of the medical device or fail to reach areas notreadily accessible after construction of the medical device. Inaddition, many medical devices are now being used in the home bypatients, and these patients generally do not have the equipmentnecessary to perform the required sterilization. Thus, on-sitesterilization has become difficult or impossible to perform at the siteof use.

To overcome this drawback, most devices are now sterilized at thefacility of manufacture, prior to shipment. Sterilization can befacilitated by sterilization of each component prior to assembly in asterilized environment. However, additional sterilization is oftenrequired. Heat and chemical sterilization cannot always be used due topossible destruction of the various materials. To overcome issues ofheat and chemical sterilization, radiation (including x-ray and electronbeam) sterilization was developed to provide sterilization of a medicaldevice once it was in its packaging. Thus, after sterilization, thedevice is shipped and stored in a sterilized environment until themedical device is to be used.

Although radiation sterilization has solved many sterilization issues,it is difficult to sterilize complicated devices containing electroniccircuits, since the radiation has the capability to damage or destroysemiconductor circuit elements. One approach is to remove the circuitsprior to sterilization, but this still raises issues of sterilizationwhen the device is reassembled.

SUMMARY OF THE DISCLOSURE

It is an object of an embodiment of the present invention to provide animproved circuit protection device which obviates for practicalpurposes, the above mentioned limitations.

According to an embodiment of the invention, a circuit protection devicefor protection of sensitive components during high energy sterilizationthat includes a support substrate and a protective housing. Thesubstrate supports the sensitive components. The protective housing ishermetically coupled to the support substrate to seal the sensitivecomponents within the protective housing. Preferably, the protectivehousing stops high energy used in the high energy sterilization fromdamaging the sensitive components from a predetermined exposure level ofhigh energy sterilization. In further embodiments, the circuitprotection device includes a protective conductor that is coupled to thesupport substrate on a side which is opposite the protective housing toprevent high energy from entering the opposite side of the supportsubstrate. The circuit protection device can also include an energyabsorbing material contained within an area sealed by the protectivehousing to absorb high energy byproducts produced by the protectivehousing stopping the high energy used in the high energy sterilization.Preferably, the support substrate is a circuit board, and the sensitiveelements are semiconductors. Also, the high energy sterilization isE-beam sterilization and the high energy are electrons, and the highenergy byproducts are x-rays.

In particular embodiments, the energy absorbing material is an epoxycontaining metal. Also, the protective housing and protective conductorare formed from a metal or other electrical conductor. For instance, themetal is selected from the group consisting essentially of titanium andaluminum.

In particular embodiments, the predetermined exposure level is above 2.0Mrad. Alternatively, the predetermined exposure level is less than orequal to 5.0 Mrad, or the predetermined exposure level is above 0.5Mrad.

In another embodiment of the present invention a circuit element for usein an electronic device includes a semiconductor structure. Thesemiconductor structure has been sterilized by a predetermined dosage ofradiation. Also, the gain characteristics after radiation sterilizationare reduced by less than a predetermined fraction of before radiationsterilization gain characteristics. In addition, after radiationsterilization the characteristics of collector current and base currentas a function of base voltage change in a generally proportionalrelationship relative to each other. In preferred embodiments, theradiation sterilization is by gamma radiation. In particularembodiments, the circuit element is a transistor, a circuit array, or aPNP high voltage structure.

In further embodiments, the predetermined fraction of before radiationsterilization gain characteristics is 25%, 50%, 75%, or the like. Thepredetermined dosage of radiation is above 5 kGy, 10 kGy, 15 kGy, 20kGy, 25 kGy, 30 kGy, or the like. In other embodiments, a ratio of thecollector current and the base current, each as a function of the basevoltage, has a magnitude greater than one for a predetermined operatingrange.

Other features and advantages of the invention will become apparent fromthe following detailed description, taken in conjunction with theaccompanying drawings which illustrate, by way of example, variousfeatures of embodiments of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

A detailed description of embodiments of the invention will be made withreference to the accompanying drawings, wherein like numerals designatecorresponding parts in the several figures.

FIG. 1 is a perspective view of a circuit board that uses a circuitprotection device in accordance with an embodiment of the presentinvention.

FIG. 2 is a partial cross-sectional diagram of the circuit protectiondevice as shown along the line 2—2 in FIG. 1.

FIG. 3 is a cross-sectional diagram that shows a circuit board with acircuit protection device, as shown in FIGS. 1 and 2, that is containedin a medical device and is exposed to E-beam sterilization.

FIG. 4 is a table describing various transistors and circuits tested inaccordance with another embodiment of the present invention.

FIG. 5 is a table showing the before and after radiation treatmentcharacteristics for the transistors and circuits, shown in FIG. 4, inaccordance with embodiments of the present invention.

FIGS. 6a to 6 c are directed to representative charts showing various Bgain, or Beta, curves for collector current versus collector emittervoltage for a preferred transistor before and after radiation treatment,shown in FIGS. 4 and 5, in accordance with embodiments of the presentinvention.

FIGS. 7a to 7 c are directed to representative charts showingcharacteristic curves, collector current versus base voltage and basecurrent versus base voltage of a preferred transistor before and afterradiation treatment, shown in FIGS. 4 and 5, in accordance withembodiments of the present invention.

FIGS. 8a to 8 c are directed to representative charts showing various Bgain, or Beta, curves for collector current versus collector emittervoltage for another transistor before and after radiation treatment,shown in FIGS. 4 and 5, in accordance with embodiments of the presentinvention.

FIGS. 9a to 9 c are directed to representative charts showingcharacteristic curves, collector current versus base voltage and basecurrent versus base voltage of another transistor before and afterradiation treatment, shown in FIGS. 4 and 5, in accordance withembodiments of the present invention.

FIGS. 10a to 10 f illustrate various circuit arrangements that mayutilize transistors sterilized in accordance with embodiments of thepresent invention, as shown in FIGS. 4 and 5.

FIG. 11 is a table showing the various transistors and circuitssterilized and the number of times sterilization was performed inaccordance with embodiments of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As shown in the drawings for purposes of illustration, the invention isembodied in a circuit protection device and method for use during E-beamsterilization to permit sterilization of a medical device containingsemiconductor circuit elements. In preferred embodiments of the presentinvention, the circuit protection device forms a permanent part of acircuit board, which permits sterilization of the medical device andcircuit board after final assembly. However, it will be recognized thatfurther embodiments of the invention may be used to protect circuitelements that are sterilized prior to final assembly in a medicaldevice. The circuit protection device is primarily adapted for use inmedical device for external use. However, alternative embodiments may beused in medical devices to be placed internally within the patient orfor both internal and external use. Preferred embodiments are for usewith medication infusion devices. However, alternative embodiments maybe used with other medical devices containing E-beam sensitivecomponents. Preferred embodiments of the present invention are directedto protecting circuits during E-beam sterilization. However, otherembodiments, may protect circuits during other sterilization techniquesthat utilize other energy sources, such as gamma ray, x-ray, protonbeam, or the like.

As shown in FIGS. 1-3, the circuit protection device 10 in accordancewith a preferred embodiments of the present invention includes a circuitboard 12 (or support substrate), a protective conductor 14 and aprotective housing 16 to cover E-beam sensitive components 18 mounted onthe circuit board 12. In preferred embodiments, the E-beam sensitivecomponents are potted (or surrounded) with an energy absorbing substance20 that further protects the E-beam sensitive components 18 mounted onthe circuit board 12.

Preferred embodiments of the protective housing 16 are sealed thecircuit board 12 to provide a hermetic seal. Thus, once the exterior ofthe protective housing 16 and the circuit board are sterilized, theentire component assembly is sterilized, since no contaminates insidethe sealed environment around the E-beam sensitive components 18 canescape to effect the sterilized device. In preferred embodiments, theprotective housing 16 is attached to the circuit board 12 using anadhesive, such as RTV, silicone based adhesives, epoxies, or the like.Also, if the energy absorbing material 20 is used and has adhesiveproperties, it may be used to secure the protective housing 16 and formthe hermetic seal. In other embodiments, the protective housing 16 maybe welded to the circuit board 12, or include a plastic liner thatpermits sonic welding of the protective housing 16 to the circuit board14. In further embodiments, the protective housing 16 may be used with agasket (not shown) and snapped in place or otherwise secured to thecircuit board 12 to form a hermetic seal.

Preferably, the protective housing 16 is formed an electron stoppinglight metal such as aluminum or titanium. In alternative embodiments,other materials may be used that stop electrons or radiation, such assilver, gold, lead, tantalum, or the like or other electricallyconductive materials. Preferably, the protective housing 16 is formedfrom a single sheet of stamped metal to facilitate assembly and toreduce cost. However, alternative embodiments may use other structures,such as cast metals, laminates, or the like. In addition, the protectiveconductor 14 should be formed of a similar electron stopping material toprevent electrons from passing through the back of the circuit board 12to the E-beam sensitive components 18.

Preferred embodiments of the protective housing 16 and protectiveconductor 14 have a thickness that is sufficient to withstand electronbeam sterilization and stop the electrons with a preferred single doseof 2.0 Mrads (or 20 kGy). However, in alternative embodiments, smallerdose levels may be used if sufficient sterilization may be achieved atthe lower dose, such as for example 0.5 Mrads (5 kGy). Larger doses mayalso be used, if the protective housing 16 and protective conductor 14(as well as other medical device components - not shown) are selectedand assembled to withstand doses up to 5.0 Mrads (50 kGy). The circuitprotection device 10 materials are carefully selected with regard toprotective housing materials, circuit board materials, electrodes, anymembranes, chemistry, lubricants, and the packaging materials, andmanufacturing tolerances to assure the ability to withstand electronbeam sterilization and the continued proper operation of the E-beamsensitive components 18 after sterilization.

In operation, as shown in FIGS. 2 and 3, the protective housing 16 stopsthe electrons in the E-beam 22 from an E-beam source 24 from reachingand impinging on the E-beam sensitive components 18 after passingthrough the walls 52 of a medical device 50. In addition, the protectiveconductor 14 prevents electrons in the E-beam 22 from reflecting off ofa back wall 54 in the medical device 50 and damaging the E-beamsensitive components 18 by passing through the back of the circuit board12. Thus, the structure of the of circuit protection device 10 formed bythe circuit board 12, the protective conductor 14 and the protectivehousing forms a small Faraday cage to protect the enclosed E-beamsensitive components 18 from damaging electrons during the sterilizationprocedure.

Light metals, as discussed above, are particularly well adapted tostopping electrons in E-beams 22. However, a drawback to the use oflight metals is that they often produce x-rays 26 (see FIG. 2) as abyproduct from the stopping of the electrons in the E-beams 22.Therefore, to protect the E-beam sensitive components 18, the interiorarea under the protective housing 16 is filled with an energy absorbingmaterial 20 that is particularly well suited for absorbing x-rays, orelectron stopping energy byproducts. In preferred embodiments, theenergy absorbing material is an epoxy that contains a metal to stop andabsorb the x-rays. Any such compound should be selected to avoidinterfering with any electrical operation of the E-beam sensitivecomponents 18. In alternative embodiments, the energy absorbing materialis a liner (not shown) in a laminate structure forming the protectiveconductor 14 and protective housing 16, such as lead, or the like, thatstops and absorbs x-rays. In further alternatives, other energyabsorbing materials may be used.

Preferred embodiments of the E-beam sensitive components 18 aresemiconductor devices, such as microprocessors, RAMs, ROMS, flashmemory, or the like. However, alternative embodiments, may include otherE-beam sensitive components, such as temperature sensors, antennas,power sources, batteries, or the like. If the E-beam sensitivecomponents 18 generate heat (or need to conduct heat), then it ispreferred that any energy absorbing material 20 act as a conductor tomaintain temperature equilibrium within the medical device 50.

FIGS. 4 through 11 are directed to another embodiment of the presentinvention, where specific transistor and circuits are selected basedupon their ability to maintain functionality with minimized loss of gaincharacteristics after radiation sterilization. A study was conducted todetermine which transistors and circuit types are most acceptable forwithstanding gamma radiation sterilization. Transistors and circuitslisted and numbered in FIGS.4 and 5 were tested prior to and then aftergamma radiation to determine the characteristics of the transistors andcircuits. The test exposed the transistors and circuits to a totalradiation dose of 30.9 to 33.3 kGy. In each of the tests, 10-20 sampleswere exposed to the radiation and samples were tested before and aftersterilization. In further embodiments, the transistors and circuits weresterilized a second time at a dosage level of 30.8 to 32.4 kGy. FIG. 11lists the components tested, the number of units tested, and how manytimes each unit was sterilized. In alternative embodiments, larger orsmaller does may be used and/or a different number of sterilizations maybe performed with the selection being dependent on the transistor orcircuit to be sterilized, type of medical device, number of times themedical device will be used, and environment in which the medical devicewill be used. In addition, other circuit components, such as Zenerdiodes, LEDs, or the like may be identified and used in theseembodiments.

FIG. 5 is a table showing the before and after radiation treatmentcharacteristics for samples of the transistors and circuits inaccordance with embodiments of the present invention. The table showsthat BF (peak) and B@˜100 uA is reduced by a substantially small amountof loss due to radiation if the proper transistor or circuit is chosen.For instance, the preferred embodiment identified that PNP, high voltagetransistors or circuits have the lowest loss of gain and deteriorationof other characteristics. Hence, selecting the proper transistor orcircuit facilitates the ability to design a medical device that willwithstand gamma radiation sterilization processes. If the gains arereduced and the characteristics degrade in a predictable manner, or in away that does not cause unexpected results to occur, the medical devicecan be safely sterilized. All test results were verified forpredictability by modeling in the SPICE program and then checking theSPICE program results against the actual obtained results. Typicalcircuits in which various radiation sterilized transistors and circuitsmay be used are shown in FIGS. 10a to 10 f.

FIGS. 6a to 6 c are directed to representative charts showing various B(beta or gain) curves, collector current versus collector-emittervoltage as a function of base currents for a preferred transistor beforeand after radiation treatment in accordance with an embodiment of thepresent invention. This chart shows that for the transistor of testgroup 1 in FIG. 5, the gain was reduced in a generally proportionalmanner. FIGS. 7a to 7 c are directed to representative charts ofcharacteristic curves, showing the relationship of collector current andbase current, each as a function of base voltage, of a preferredtransistor before and after radiation treatment in accordance with anembodiment of the present invention. A key aspect of FIG. 7c is that thegain of the transistor as a function of base voltage before theradiation treatment has roughly the same proportionality (on alogarithmic graph) after radiation treatment. The graphed relationshipshows a similar slope, which implies a lowering of gain, but without asignificant increase in leakage current at the base emitter junction ofthe device. The gain after sterilization treatment is therefore shiftedlower, but proportionately. This implies that the transistor will workin a manner consistent with its behavior prior to radiationsterilization. For instance, a ratio of collector current to basecurrent (hFe or gain), each as a function of base voltage, of theexpected, normal operating range of circuit will yield a ratio having amagnitude greater than one—the slopes will not intercept in the expectedoperating range. The operating range being determined by the type ofmedical device, length of operation, operating environment and safetymargin required to avoid malfunctions. Thus, the electronics of themedical device may be designed to utilize a gain with the expected andpredictable change after the sterilization treatment. This finding meansthat a medical device circuit without feedback control can be designedto work predictably with components having these characteristics. Also,for circuits using feedback control, circuits in medical devices inwhich the components are used can be designed to work even with the gainreduction after sterilization treatment. Further, it should beunderstood that the graphs show a general relationship on thecharacteristics, which may be used to tune the radiation sterilizationprocess or circuit design to achieve desired performance characteristicsin the radiation sterilized medical device.

Conversely, FIGS. 8a to 8 c are directed to representative chartsshowing various B (Beta, or gain) curves, collector current versuscollector-emitter voltage as a function of base current, for anothertransistor before and after radiation treatment in accordance with anembodiment of the present invention. The gain of this transistor in testgroup 2 shows that the gain changed in a non-proportional manner (on alogarithmic graph) for some values of base current. FIGS. 9a to 9 c aredirected to representative charts of characteristic curves, collectorcurrent and base current, each as a function of base voltage. Thisimplies leakage at the semiconductor junction in the device, and gainnon-linearity, especially at low base voltages, where base currentsrepresent a larger proportion of the total collector current. In thisinstance, the component would not change predictably after thesterilization treatment, and would be far less suitable as a componentchoice for the circuit in a medical device. For instance, a ratio ofcollector current to base current (hFe or gain), each as a function ofbase voltage, of the expected, normal operating range of circuit willyield a ratio having a magnitude less than or equal to one—the slopeswill intercept at some point within the expected operating range. Theoperating range being determined by the type of medical device, lengthof operation, operating environment and safety margin required to avoidmalfunctions.

While the description above refers to particular embodiments of thepresent invention, it will be understood that many modifications may bemade without departing from the spirit thereof. The accompanying claimsare intended to cover such modifications as would fall within the truescope and spirit of the present invention.

The presently disclosed embodiments are therefore to be considered inall respects as illustrative and not restrictive, the scope of theinvention being indicated by the appended claims, rather than theforegoing description, and all changes which come within the meaning andrange of equivalency of the claims are therefore intended to be embracedtherein.

What is claimed is:
 1. A circuit protection device for protection ofsensitive components during high energy radiation sterilization, thedevice comprising; a support substrate that supports the sensitivecomponents; a protective housing that is hermetically coupled to thesupport substrate to seal the sensitive components within the protectivehousing; wherein the protective housing stops high energy used in thehigh energy radiation sterilization from damaging the sensitivecomponents from a predetermined exposure level of high energysterilization; and an energy absorbing material contained within an areasealed by the protective housing to absorb high energy byproductsproduced by the protective housing stopping the high energy used in thehigh energy sterilization.
 2. The device according to claim 1, furtherincluding a protective conductor coupled to the support substrate on aside opposite the protective housing to prevent high energy fromentering the side of the support substrate.
 3. The device according toclaim 2, wherein the support substrate is a circuit board, and whereinthe sensitive elements are semiconductors.
 4. The device according toclaim 2, wherein the high energy sterilization is E-beam sterilizationand the high energy are elections.
 5. The device according to claim 4,wherein the high energy byproducts are x-rays.
 6. The device accordingto claim 5, wherein the energy absorbing material is an epoxy containingmeterial.
 7. The device according to claim 3, wherein the predeterminedexposure level is above 2.0 Mrad.
 8. The device according to claim 3,wherein the predetermined exposure level is less than or equal to 5.0Mrad.
 9. The device according to claim 3, wherein the predeterminedexposure level is above 0.5 Mrad.
 10. The device according to claim 2,wherein the protective housing and protective conductor are formed froma metal.
 11. The device according to claim 10, wherein the metal isselected from the group consisting essentially of titanium and aluminum.12. The device according to claim 1, wherein the protective housing isformed from a metal.
 13. The device according to claim 12, wherein themetal is selected from the group consisting essentially of titanium andaluminum.
 14. A circuit element for use in an electronic device, thecircuit element comprising: a semiconductor structure, wherein thesemiconductor structure has been sterilized by a predetermined dosage ofradiation, wherein gain characteristics after radiation sterilizationare reduced by less than a predetermined fraction of before radiationsterilization gain characteristics, and wherein after radiationsterilization, characteristics of a collector current and a base currentfor a given base voltage change in a generally proportional relationshiprelative to each other.
 15. The circuit element in accordance with claim14, wherein the radiation sterilization is by gamma radiation.
 16. Thecircuit element in accordance with claim 14, wherein the predeterminedfraction of before radiation sterilization gain characteristics is 25%.17. The circuit element in accordance with claim 14, wherein thepredetermined fraction of before radiation sterilization gaincharacteristics is 20%.
 18. The circuit element in accordance with claim14, wherein the predetermined fraction of before radiation sterilizationgain characteristics is 75%.
 19. The circuit element in accordance withclaim 14, wherein the predetermined dosage of radiation is above 5 kGy.20. The circuit element in accordance with claim 14, wherein thepredetermined dosage of radiation is above 10 kGy.
 21. The circuitclement in accordance with claim 14, wherein the predetermined dosage ofradiation is above 15 kGy.
 22. The circuit element in accordance withclaim 14, wherein the predetermined dosage of radiation is above 20 kGy.23. The circuit element in accordance with claim 14, wherein thepredetermined dosage of radiation is above 25 kGy.
 24. The circuitelement in accordance with claim 14, wherein the predetermined dosage ofradiation is above 30 kGy.
 25. The circuit element in accordance withclaim 14, wherein the circuit element is a transistor.
 26. The circuitelement in accordance with claim 14, wherein the circuit element is acircuit array.
 27. The circuit element in accordance with claim 14,wherein a ratio of collector current to base current, each as a functionof the base voltage, has a magnitude greater than one over apredetermined expected operating image.
 28. The circuit element inaccordance with claim 14, wherein the semiconductor structure is a PNPhigh voltage structure.